c top b e c back e b jiangsu changjiang electronics technology co.,ltd wbfbp-03a plastic-encapsulate transistors MMBT2907AE transistor description pnp epitaxial planar type silicon transistor features complementary npn type available(mmbt2222ae) pplication general purpose amplifier, switching. for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking:2f c 2f b e maximum ratings t a = 25 unless otherwise noted symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -600 ma p c collector dissipation 150 mw t j junction temperature 150 t stg storage temperature -55to+150 electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c = -10ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50 v,i e =0 -0.01 a emitter cut-off current i ebo v eb = -5v,i c =0 -0.01 a h fe(1) v ce =-10v,i c =-0.1ma 75 h fe(2) v ce =-10v,i c =-1ma 100 h fe(3) v ce =-10v,i c =-10ma 100 h fe(4) v ce =-10v,i c =-150ma 100 300 dc current gain h fe(5) v ce =-10v,i c =-500ma 50 collector-emitter saturation voltage v ce (sat) i c =-500ma,i b =-50ma i c =-150ma,i b =-15ma -1.6 -0.4 v base-emitter saturation voltage v be (sat) i c =-500ma,i b =-50ma i c =-150ma,i b =-15ma -2.6 -1.3 v transition frequency f t v ce =-20v, i c =-50ma f= 100mhz 200 mhz collector output capacitance c ob v cb =-10v, i e = 0 , f= 1m hz 8 pf noise figure nf v cb =-5v,i c =-0.1ma, f=1khz,rs=1k ? 4 db wbfbp-03a (1.61.60.5) unit: mm 1. base 2. emitter 3. collector
electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min typ max unit delay time t d 10 ns rise time t r v cc =-30v, i c =-150ma , i b1 =-15ma 40 ns storage time t s 225 ns fall time t f v cc =-6v, i c =-150ma i b1 =-i b2 =-15ma 30 ns typical characteristics MMBT2907AE
m in. m ax. m in. m ax. a 0.450 0.550 0.018 0.022 a1 0.010 0.090 0.000 0.004 b 0.230 0.330 0.009 0.013 b1 d 1.550 1.650 0.061 0.065 e 1.550 1.650 0.061 0.065 d2 e2 e l l1 l2 l3 l4 k z 0.320 ref. 0.013 ref. 0.160 ref. 0.006 ref. sym bol d im ensions in m illim eters d im ensions in inches 1.000 typ. 0.040 typ. 0.750 ref. 1.000 ref. 0.030 ref. 0.040 ref. 0.320 ref. 0.013 ref. 0.230 ref. 0.180 ref. 0.280 ref. 0.011 ref. 0.250 ref. 0.200 ref. 0.009 ref. 0.007 ref. 0.010 ref. 0.008 ref.
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